Assessment of off-state negative gate voltage requirements forIGBTs |
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| Authors: | McNeill N Kuang Sheng Williams BW Finney SJ |
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| Affiliation: | Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh; |
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| Abstract: | This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors |
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