Ultra-compact 350 GHz gain-bandwidth product 40 Gbit/s predriver IC in SiGe bipolar technology |
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| Authors: | Schick C. Weiss H. Hernandez-Guillen F. Trasser A. Schumacher H. |
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| Affiliation: | Dept. of Electron Devices & Circuits, Univ. of Ulm, Germany; |
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| Abstract: | An ultra-compact 0.36 mm/sup 2/ differential wideband amplifier fabricated using SiGe technology is presented. Measurements show an on-wafer gain of 20.8 dB and a 3 dB cutoff frequency of 32.0 GHz. The mounted amplifier's gain is 19.5 dB. The circuit is intended to operate as a predriver in a 40 Gbit/s fibre-optic communication system. |
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