Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening |
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Authors: | Hong Xinhong Pan Liyang Zhang Wendi Ji Dongmei Wu Dong Shen Chen and Xu Jun |
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Affiliation: | 1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China;2. Cogenda Co Ltd, Suzhou 215123, China |
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Abstract: | A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size. |
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Keywords: | SRAM SEE SEU radiation hardening 3-D simulation |
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