扫描探针显微术在GaAs等半导体研究中的应用

扫描探针显微术（ＳＰＭ）是８０年代初发展起来的一类新型表面研究技术。由于其分辨率高、蝗操作和可扩展性，扫描探针显微术越来越受到人们的重视。１９８６年Ｇ．宾尼希（Ｇ．Ｂｉｎｎｉｇ）和Ｈ．罗雷尔（Ｈ．Ｒｏｈｒｅｒ）为此获得了诺贝尔物理学奖。本文中我们详细阐述扫描隧道显微镜（ＳＴＭ）、原子力显微镜（ＡＦＭ）、扫描电容是微镜（ＳＯＭ）、扫描热显微镜（ＳＴｈＭ）等几种扫描探针显微术的工作原理，也描述队们在探

The Application of the Scanning Probe Microscopy in the GaAs Semiconductor

Scanning probe microscopy (SPM),a new technology to analyses the solid surface,is developed in 1980's.But it has gotten more and more attention because of its highresolution,easyoperation,easy-extension.In 1986,G.Binning and H.Rohrer were awarded Nobel Prize because of their great ideas on SPM.In this article,the principle of scanning tunneling microscopy,atomic force microscopy,scanning capacitance microscopy,scanning thermal microscopy were described in detail.And the very located interaction between tip and surface which is used to prepare the nano-structure in the material is written in this article also.Especially the application of the analysis on semiconductor surface and the nanofabrication of semiconductor is emphasized in this article.We also point out the large prospect of SPM.