GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate |
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Authors: | Chuang Linus C Sedgwick Forrest G Chen Roger Ko Wai Son Moewe Michael Ng Kar Wei Tran Thai-Truong D Chang-Hasnain Connie |
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Affiliation: | Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA. |
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Abstract: | Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode. |
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