| 液相外延HgCdTe的研究 |
| |
| 引用本文： | 王雷,高鼎三,吴仰贤. 液相外延HgCdTe的研究[J]. 电子与信息学报,1987,9(5): 428-434. |
| |
| 作者姓名： | 王雷 高鼎三 吴仰贤 |
| |
| 作者单位： | 吉林大学电子科学系，吉林大学电子科学系，马里兰大学物理与天文系 清华大学无线电系，美国 |
| |
| 摘 要： | 本文对液相外延生长HgCdTe及其汞压控制进行了研究。在理论上对开管滑动系统中汞损失的影响作了分析和计算,提出了准平衡汞压的方法。在实验中设计制作了独特的汞回流装置,实现了对汞压的控制。通过生长工艺的条件实验,得到了各工艺参数影响外延片性能的关系,制备出表面光亮,组分为x=0.2110.002,x=0.280.001的Hg1-xCdxTe外延片。在77K下n型(未退火)和P型外延片的迁移率分别为3.36105cm2/Vs和1.81103cm2/Vs,载流子浓度分别为1.091015cm-3和1.041016cm-3。
|
| 收稿时间： | 1986-03-22 |
| 修稿时间： | 1986-12-15 |
STUDY ON LEP OF HgCdTe AND CONTROL OF Hg PRESSURE |
| |
| Wang Lei,Gao Dingsan,Wu Yangxian. STUDY ON LEP OF HgCdTe AND CONTROL OF Hg PRESSURE[J]. Journal of Electronics & Information Technology,1987,9(5): 428-434. |
| |
| Authors: | Wang Lei Gao Dingsan Wu Yangxian |
| |
| Affiliation: | Department of Electronics Science Jilin University; Department of Physics and Astronomy University of Maryland; USA |
| |
| Abstract: | The control of Hg pressure is a major problem of LEP growth of HgCdTe. In this paper the lost of Hg and its affections and control in open tube sliding LEP system are analysed theoretically. A unique method of controlling Hg pressure, called pseudo-balance Hg pressure method is proposed. In this method, a circulatory system of Hg that is efficacious for control of Hg pressure is used. By experiments of growth conditions, the better way of LEP growth of HgCdTe was found. The HgCdTe epitaxial layers have been grown with mirror-like surface morphology, x=0.211±0.002 and x=0.28±0.001, mobility of 1.81×103cm2/V·s for p-type and 3.36×105cm2/V·s for n-type (not annealed), carrier concentration of 1.04×1016/cm-3 for p-type and 1.09×1015cm-3 for n-type (not annealed) at 77K. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《电子与信息学报》浏览原始摘要信息 |
|
点击此处可从《电子与信息学报》下载全文 |
|
