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Effect of oxide additives on the low-temperature sintering of dielectrics (Zn,Mg)TiO3 |
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| Authors: | Ming-Liang Hsieh Hsiang-Chen Hsu Mau-Phon Houng |
| Affiliation: | a Department of Electrical Engineering, I-Shou University, Kaohsiung, Taiwan, ROC b Department of Electronic Engineering, I-Shou University, Kaohsiung, Taiwan, ROC c Department of Mechanical Engineering, I-Shou University, Kaohsiung, Taiwan, ROC d Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC |
| Abstract: | The effect of oxide additives on the low-temperature sintering and dielectric properties of microwave dielectrics (Zn,Mg)TiO3 have been investigated. The study showed that a small amount of V2O5 accelerated the densification rate of (Zn,Mg)TiO3 dielectrics as compared with the other oxide additives. In addition to lower sintering temperature of zinc titanate dielectrics, the addition of V2O5 decreased the decomposition temperature of (Zn,Mg)TiO3. Additionally, the increased amount of magnesium raised both the sintering temperature and the decomposition temperature of (Zn,Mg)TiO3. Relative permittivity of (Zn,Mg)TiO3 dielectrics decreased accompanied with increase of Q × f as the amount of magnesium content increased. The temperature coefficient of resonant frequency of (Zn,Mg)TiO3 shifted to more negative values as the amount of magnesium increased. |
| Keywords: | A Ceramics C X-ray diffraction D Dielectric properties |
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