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Photoelectrical properties of layered GaS single crystals and related structures |
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| Authors: | M. Caraman L. Leontie I.I. Rusu |
| Affiliation: | a Bacau University, 157 Calea Marasesti, 600115 Bacau, Romania b Moldova State University, 60 A Mateevici Street, Chisinau MD-2009, Republic of Moldova c Faculty of Physics, “Al.I. Cuza” University, 11 Carol I Boulevard, 700506 Iasi, Romania |
| Abstract: | The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni-GaS(Cu)-In and GaS(Cu)-ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, ∼400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO-GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250-700 nm. |
| Keywords: | A. Layered compounds A. Semiconductors B. Crystal growth D. Electrical properties |
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