Synthesis and photoluminescence properties of aligned Zn2GeO4 coated ZnO nanorods and Ge doped ZnO nanocombs

Aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs were synthesized on a silicon substrate by a simple thermal evaporation method. The structure and morphology of the as-synthesized nanostructure were characterized using scanning electron microscopy and transmission electron microscopy. The growth of aligned Zn₂GeO₄ coated ZnO nanorods and Ge doped ZnO nanocombs follows a vapor-solid (VS) process. Photoluminescence properties were also investigated at room temperature. The photoluminescence spectrum reveals the nanostructures have a sharp ultraviolet luminescence peak centered at 382 nm and a broad green luminescence peak centered at about 494 nm.