The incorporation of hydrogen into III-V nitrides during processing |
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Authors: | S. J. Pearton R. J. Shul R. G. Wilson F. Ren J. M. Zavada C. R. Abernathy C. B. Vartuli J. W. Lee J. R. Mileham J. D. Mackenzie |
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Affiliation: | (1) University of Florida, 32611 Gainesville, FL;(2) Sandia National Laboratories, 87185 Albuquerque, NM;(3) Hughes Research Laboratories, 90265 Malibu, CA;(4) AT & T Bell Laboratories, 07974 Murray Hill, NJ;(5) U.S. Army Research Office, 27709 Research Triangle Park, NC |
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Abstract: | Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water, and other process steps, in addition to its effects during metalorganic chemical vapor deposition or metalorganic molecular beam epitaxial growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation of passivated shallow donors in the nitrides occurs at 450-550°C, but evolution from the crystal requires much higher temperatures (≥800°C for GaN). |
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Keywords: | III-V nitrides defects hydrogen passivation shallow donors |
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