| PEALD沉积温度对AlN的结构和表面特性的影响 |
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| 引用本文： | 陈芳,方铉,王双鹏,牛守柱,方芳,房丹,唐吉龙,王晓华,刘国军,魏志鹏. PEALD沉积温度对AlN的结构和表面特性的影响[J]. 红外与激光工程, 2016, 45(4): 421001-0421001(4). DOI: 10.3788/IRLA201645.0421001 |
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| 作者姓名： | 陈芳 方铉 王双鹏 牛守柱 方芳 房丹 唐吉龙 王晓华 刘国军 魏志鹏 |
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| 作者单位： | 1.长春理工大学 光电工程学院 高功率半导体激光国家重点实验室,吉林 长春 130022; |
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| 基金项目： | 国家自然科学基金(61076039,61204065,61205193,61307045);高等学校博士学科点专项科研基金(20112216120005);吉林省科技发展计划(20121816,201201116);高功率半导体激光国家重点实验室基金(9140C310101120C031115) |
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| 摘 要： | 研究通过等离子增强原子层沉积(PEALD)在不同沉积温度下生长的AlN温度对其特性的影响。前驱体是NH3和TMA,在300℃、350℃和370℃沉积温度下分别沉积了200、500、800、1 000、1 500周期的AlN层,并讨论了AlN薄膜的生长速率、结晶化和表面粗糙度。结果表明,在300~370℃范围内,随着温度的上升薄膜的沉积速率和结晶化增加,而薄膜表面粗糙度减小。
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| 关 键 词： | 氮化铝 等离子增强原子层沉积 生长速率 结晶化 表面粗糙度 沉积温度 |
| 收稿时间： | 2015-08-21 |
Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition |
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| Affiliation: | 1.State Key Laboratory of High Power Semiconductor Lasers,School of Science,and School of Photoelectric Engineering,Changchun University of Science and Technology,Changchun 130022,China;2.National Key Laboratory of Optical and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130022,China;3.National Institute Silicon of LED on Si Substrate,Nanchang University,Nanchang 330047,China |
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| Abstract: | The influence of growth temperature on the properties of aluminum nitride(AlN) films are grown by plasma enhanced atomic layer deposition(PEALD) at different deposition temperature. NH3 and trimethylaluminum(TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300℃, 350℃ and 370℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370℃. |
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