正照射延伸波长In0.8Ga0.2As红外焦平面探测器

为了研究延伸波长In0.8Ga0.2As PIN短波红外探测器的温度响应光电特性，采用闭管扩散的平面型器件工艺，在金属有机化学气相外延（MOCVD）外延生长的NIN型InAs0.6P0.4/In0.8Ga0.2As/InAs0.6P0.4 buf./InP材料上制备了正照射延伸波长2561线列InGaAs红外焦平面探测器，研究了探测器在不同温度下的I-V特性、光谱响应特性和探测率。结果表明，随着温度的降低，在小偏压下，器件的正向暗电流由产生复合电流为主逐渐变为以扩散电流为主。在260~300 K温度范围内，反向电流主要由扩散电流和产生复合电流组成，当温度低于180 K时，器件的反向电流主要为隧穿电流。室温下器件响应截止波长和峰值波长分别为2.57 m和2.09 m，峰值探测率为7.25108 cmHz1/2/W，峰值响应率为0.95 A/W，量子效率为56.9%。焦平面的峰值探测率在153 K达到峰值，约为1.111011 cmHz1/2/W，响应非均匀性为5.28%。

Extended-wavelength In0.8Ga0.2As IRFPA detector arrays for front-illumination

In order to study the temperature-dependent photoelectric characteristics of the extended wavelength In0.8Ga0.2As PIN infrared detectors, based on planer process with sealed-ampoule diffusion method, front-illuminated 2561 linear planar InGaAs detector arrays were fabricated on NIN-InAs0.6P0.4/In0.8Ga0.2As/InAs0.6P0.4 buf./InP materials by metal organic chemical vapor deposition (MOCVD). And the I-V characteristics, spectral response and detectivity of the detector at different temperatures were analyzed. The results indicate that the forward dark current is dominated by the generation-recombination current and gradually becomes the diffusion current with temperature dropping. Diffusion current and generation-recombination current were the main resource of reverse current of the detector between 260 K and 300 K. The tunneling current predominated at temperature below 180 K. The cutoff wavelength and peak wavelength were 2.57 m and 2.09 m at room temperature. The peak detectivity, peak responsivity and quantum efficiency was 7.25108 cmHz1/2/W, 0.95 A/W and 56.9% respectively. Furthermore, the average peak detectivity of the detector arrays reached a peak value of 1.111011 cmHz1/2/W and the response nonuniformity was about 5.28% at 153 K.