宽谱光源对CMOS阵列电串扰的影响

CMOS阵列探测器中，像素单元间的串扰会影响其成像质量。为了解不同光源对CMOS电串扰的影响，针对CMOS图像传感器的电串扰特性建立了一个分析模型，结合CMOS图像传感器的工作原理定量计算了单色光、宽谱光源入射条件下的电串扰特性。分析结果表明CMOS图像传感器的电串扰随单色光波长、宽谱光源谱宽和中心波长的增大而增大，但中心波长与单色光波长相同的宽谱光源，其对电串扰的影响大于单色光。辐照功率为600 W，单色光波长为1 064 nm，电串扰大小约为50.611 mV；宽谱光源中心波长为1 064 nm，谱宽为400 nm时，电串扰的大小约为50.914 mV，相比于单色光电串扰增加了约0.303 mV。

Effect of broadband sources on electrical crosstalk of CMOS array

The crosstalk between the pixel units is the key parameter for the imaging quality of CMOS array detector. The mathematical analysis model of the electrical crosstalk was established in order to explore the influence of different light sources on the electrical crosstalk of CMOS. Furthermore, the characteristics of electrical crosstalk under the illumination of monochromatic light and broadband sources were also numerically simulated. The results show that, the electrical crosstalk increases with the increase of the wavelength of monochromatic light, as well as the spectrum bandwidth and the center wavelength of broadband sources. Moreover, the impact of broadband sources on the electrical crosstalk is greater than monochromatic light when their center wavelengths are the same. The electrical crosstalk for the monochromatic light with the radiation power of 600 W and the wavelength of 1 064 nm is about 50.611 mV, and the electrical crosstalk for broadband source with the spectrum bandwidth of 400 nm is about 50.914 mV in the same radiation power and wavelength. Consequently, the electrical crosstalk of broadband source increased by about 0.303 mV compared to the monochromatic light.