| 高功率110 GHz平衡式肖特基二极管频率倍频器 |
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| 引用本文： | 田遥岭,何月,黄昆,蒋均,缪丽.高功率110 GHz平衡式肖特基二极管频率倍频器[J].红外与激光工程,2019,48(9):919002-0919002(6). |
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| 作者姓名： | 田遥岭 何月 黄昆 蒋均 缪丽 |
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| 作者单位： | 1.中国工程物理研究院 微系统与太赫兹研究中心,四川 成都 610200; |
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| 基金项目： | 国家重点基础发展研究计划（2015CB755406）;国防基础科研计划（JCKY2017212C002） |
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| 摘 要： | 高频段的太赫兹信号通常是由多个倍频器级联输出的，因此要求倍频链路的前级必须具备高输出功率的能力。为了提升太赫兹倍频器的功率容量和效率，结合高频特性下肖特基二极管有源区电气模型建模方法，采用高热导率的陶瓷基片，利用对称边界条件，在HFSS和ADS中实现对倍频器电路的分析和优化，研制出了高功率110 GHz平衡式倍频器。最终测试结果表明，驱动功率为28 dBm左右时，该倍频器在102~114.2 GHz的工作带宽内的最高输出功率和效率分别为108 mW和17.6%，为链路后续的二倍频和三倍频提供足够的驱动功率。
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| 关 键 词： | 高功率 110 GHz 肖特基二极管 平衡式倍频器 |
| 收稿时间： | 2019-05-11 |
High power 110 GHz balanced Schottky diode frequency doubler |
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| Affiliation: | 1.Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;2.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China |
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| Abstract: | Generation of power at higher terahertz frequencies typically requires several stages of multiplication, which put forward the demand for high power devices at earlier stages. For higher power capacity and efficiency, the doubler circuit was realized based on ceramic substrates with high thermal conductivity. Moreover, with the accurate Schottky diode equal model, a high power 110 GHz balanced doubler was analyzed and designed in HFSS and ADS using symmetry boundary condition. With an input power of 28 dBm, the measured results showed that the maximum output power and efficiency of the doubler range from 102 to 114.2 GHz are 108 mW and 17.6% respectively, providing sufficient power for the chain. |
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