热应力加速试验评定碲镉汞焦平面阵列像元储存寿命

高可靠性长寿命碲镉汞焦平面阵列像元性能参数慢慢变差退化失效，确定它的储存寿命要用B类试验缩短试验时间。有效加速寿命试验ALT或加速退化试验ADT的恒定热应力，应大于高温+90℃、2 160 h。定量加速试验前，应进行高加速应力筛选试验HASS迫使缺陷发展，以暴露可能存在的早期故障。根据碲镉汞红外焦平面探测器杜瓦组件高温储存试验性能退化测试数据，用统计模型对在恒定高温应力水平下获得的失效时间或退化特征性能参数进行转换，得到在+25℃额定应力水平下的储存寿命大于50年。超过3 000 h高温储存试验结果表明，残余工艺应力释放导致试验前1 500 h像元性能有向好的趋势，在高温+80℃的真空环境下烘烤20天不会造成明显的像元性能恶化。

Evaluating its storage life using thermal stress accelerated HgCdTe FPA performance degradation

HgCdTe FPA pixel performance of high-reliability and long-life is worse, degraded and failed over time in service life. To determine its storage life, the test time should be shortened by class B test, the constant stress of ALT or ADT should be greater than that of high temperature +90℃,2 160 h. The high acceleration stress screening test HASS should be forced to develop the defect to expose the possible early failure before the quantitative acceleration test. According to the high temperature storage test performance degradation test data of the HgCdTe FPA Dewar assembly, the statistical model was used to convert the failure time or performance parameter degradation characteristics. The storage life was greater than 50 years under rated stress level st +25℃. More than 3 000 h the high temperature storage test results show that the pixel performance tends to be better before 1 500 h because residual technological stress is released. Baking for 20 days in a vacuum environment of high temperature +80℃ does not cause deterioration of pixel performance.