光诱导氧化钒薄膜原位太赫兹波调制特性研究

采用磁控溅射及快速热氧化法在c-Al2O3基底制备出高质量的氧化钒薄膜。首先，分析结果表明所制备的氧化钒薄膜表面颗粒大小均匀，表面均方根粗糙度约为16.75 nm，主要成分为VO2和V2O5，V4+离子的含量为78.59%，所制备的氧化钒薄膜具有稳定的热致相变特性；其次，光诱导下薄膜的THz波调制特性研究结果显示，随着激励光功率增大，薄膜的THz透过率逐渐减小；最后，经过多次原位反复测试结果表明所制备的氧化钒薄膜具有稳定可逆的THz波调制特性，可应用于太赫兹开关和调制器等集成式太赫兹功能器件。

Research of photo-excited in-situ terahertz wave modification properties of vanadium oxide thin films

The vanadium oxide thin film with high quality was prepared on c-Al2O3 substrate for the first time by magnetron sputtering with rapid thermal process(RTP). Firstly, the surface particle size of the film was uniform, the surface root mean square roughness was about 16.75 nm, the major components of the film were VO2 and V2O5, V4+ content was about 78.59%. The prepared vanadium oxide thin films had the stable property of thermal-excited phase transition; Secondly, the terahertz transmission modulation was characterized by terahertz time-domain spectroscopy system(THz-TDS). The result indicated that the transmission ratios of the film increased with increasing optical excitation power; Finally, the amplitudes of the THz waves for vanadium oxide without any obvious fluctuation after the optimized process conditions of preparation and transmission ratios were nearly stable within repeated testing by in-site test, could be widely used for THz devices such as modulators and switches.