FT-CCD的纳秒脉冲激光毁伤效应

用1 064 nm波长8 ns脉宽激光,以1-on-1模式辐照在评估板驱动工作下的FT50M型FT-CCD图像传感器进行实验。结果显示,随着脉冲能量密度的逐渐提高,在FT-CCD输出图像中依次出现辐照点单侧黑线、白点、两侧白线等典型毁伤现象。这区别于IT-CCD在脉冲激光辐照下依次出现白点、白线的毁伤过程。通过对比FT-CCD与IT-CCD的结构异同,结合已知的IT-CCD的毁伤机制,分析认为单侧黑线毁伤现象的首先出现表明了FT-CCD多晶硅电极先于硅衬底受损的激光毁伤模式。文中丰富了对CCD图像传感器激光毁伤效应的认识,为深入探索CCD激光毁伤机制提供了新的线索。

Effect of FT-CCD damaged by nanosecond pulse laser

By the way of 1-on-1, the FT50M FT-CCD working on the evaluation kit is irradiated by the 1 064 nm pulse laser with 8 ns pulse width. The experiment shows that, along with the increase of laser pulse energy density, the damage phenomena of unilateral black line, white spot and bilateral white line from the position irradiated by laser successively appear in the output image of FT-CCD. This process distinguishes obviously from the IT-CCD, which presents successively the white spot and bilateral white line in the similar experiments. Comparing the structures of FT-CCD and IT-CCD, and combing the damage mechanism of IT-CCD, it is thought that the first occurrence of unilateral black line damage phenomenon indicate a FT-CCD damage mode of the poly-silicon electrode being damaged earlier than the Si substrate. This study enriches the knowledge of laser damaging CCD image sensor, and provides a new clue for deep searching the mechanism of laser damage CCD.