硅基铌掺杂Bi_4Ti_3O_(12)薄膜溶胶-凝胶工艺的制备及铁电性改善研究

采用溶胶-凝胶(Sol-Gel)法制备了铌元素(Nb)取代Ti元素的Bi4Ti3O12(BTN)铁电薄膜,研究不同掺杂浓度,不同退火温度等工艺对BTN薄膜的微观特性及剩余极化强度、矫顽场等电性能的影响。研究表明,650℃进行退火的BTN薄膜生长形态,晶粒开始呈棒状生长;当温度高于850℃时,薄膜的c轴生长取向增长趋势不再明显。铁电性方面,对Ti进行2%掺杂取代的BTN薄膜的铁电性能最佳。从而获得了BTN薄膜制备的合理工艺参数。

Research on Nb-doped Bi4Ti3O12 Prepared on p-Si with Sol-Gel

In order to master the correct techniques,in this experiment,we use sol-gel method to prepare BIT film to research the anneal temperature's effects on the micro-structure of the film.The research shows that with the growth of the temperature,c-orientation of BIT is improved.The particles in the BIT film begins to grow in the form of stick-like structure with the annealing temperature is higher than 650℃.When the annealing temperature is higher than 850℃,the trend of c-orientation growth become not so obvious.