Impact of defects on the high-κ/MG stack: The electrical characterization challenge |
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| Authors: | Luigi Pantisano L- Ragnarsson M Houssa R Degraeve G Groeseneken T Schram S Degendt M Heyns V Afanas&#x;ev A Stesmans |
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| Affiliation: | aIMEC Kapeldreef 75, Leuven, Belgium;bElectrical Engineering Department, KU Leuven, Leuven, Belgium;cChemistry Department, KU Leuven, Leuven, Belgium;dPhysics Department, KU Leuven, Leuven, Belgium |
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| Abstract: | The integration of high-κ dielectrics in MOSFET devices is beset by many problems. In this paper a review on the impact of defects in high-κ materials on the MOSFET electrical characteristics is presented. Beside the quality of the bulk of the dielectric itself, the interfaces between the high-κ and the interfacial oxide layer and the gate electrode are of crucial importance. When poly-Si is used as gate electrode, the defects at the poly-Si/high-κ interface control the band alignment as well as the gate depletion. The quality and thickness of the interfacial SiO2 controls both the carrier mobility in the channel as well as the kinetics of charging and discharging of pre-existing high-κ defects. The quality of the interfacial layer has also important consequences for reliability specifications like negative bias instability and dielectric breakdown. |
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| Keywords: | Defects MG stack |
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