| 纳秒脉冲真空绝缘沿面闪络机理研究 |
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| 引用本文： | 王志华,高巍. 纳秒脉冲真空绝缘沿面闪络机理研究[J]. 绝缘材料, 2009, 42(1) |
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| 作者姓名： | 王志华 高巍 |
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| 作者单位： | 中国电工技术学会,北京,100823;中国电工技术学会,北京,100823 |
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| 摘 要： | 汇总了纳秒脉冲真空绝缘沿面闪络实验研究结果,实验表明,不同电压波形作用下闪络场强存在较大差异.纳秒脉冲闪络场强显著高于其它电压波形.分析认为纳秒脉冲闪络是一个不断向平衡状态逼近的过程,基于电子激励解吸附原理的二次电子崩理论(SEEA)适用于分析纳秒脉冲真空闪络问题.在纳秒脉冲闪络发生的微观过程中,阴极三结合点场致电子发射是真空闪络发生的必要条件,二次电子崩过程是闪络发展的必备环节.闪络过程在绝缘体表面脱附气体层中完成.
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| 关 键 词： | 纳秒 真空 闪络 阴极三结合点 二次电子崩 |
Discussion on the Mechanism of Flashover Characteristics Under Nanosecond Pulse in Vacuum |
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| WANG Zhi-hua,GAO Wei. Discussion on the Mechanism of Flashover Characteristics Under Nanosecond Pulse in Vacuum[J]. Insulating Materials, 2009, 42(1) |
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| Authors: | WANG Zhi-hua GAO Wei |
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| Affiliation: | China Electrotechnical Society;Beijing 100823;China |
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| Abstract: | Experimental results relating to nanosecond flashover in vacuum are summarized.The results show there are many differences in flashover field-strength under different voltage wave and the numerical value under nanosecond is the highest.The mechanism of nanosecond flashover is discussed and the conclusion is reached,that is secondary electron emission avalanche(SEEA) is suit for explaining nanosecond flashover.During the micro-process of flashover,electrons emitted from CTJ(cathode triple junction) are the o... |
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