Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation |
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Authors: | P B Parchinskiy A A Nasirov L G Ligai M M Allambergenov K A Ismailov |
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Affiliation: | 1.National University of Uzbekistan,Tashkent,Uzbekistan;2.Karakalpak State University,Nukus,Uzbekistan |
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Abstract: | The generation characteristics of silicon-(lead borosilicate) glass interface have been studied by the method of isothermal
capacitance transient spectroscopy in the metal-insulator-semiconductor (MIS) structure. It is established that the effective
surface generation velocity depends on the amplitude of the inverting voltage pulse that drives the MIS structure out of the
equilibrium state. The observed dependence may be caused by the injection of charge carriers through the silicon-glass interface
followed by their localization on traps in the region of glass near the interface. |
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