Double junction AlInAs/GaInAs multiquantum well avalanche photodiodes |
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| Authors: | Le Bellego Y Praseuth JP Scavennec A |
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| Affiliation: | CNET, Bagneux, France; |
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| Abstract: | A separate absorption, grading, and multiplication avalanche photodiode with an AlInAs/GaInAs multiquantum well multiplication region is reported. This device exhibits a low excess-noise factor and a gain-bandwidth product of 50 GHz, due to the high ratio of ionisation rates of the multiplication material. In addition, a large bandwidth is obtained owing to the use of an undoped (n type) GaInAs absorption layer, fully depleted when multiplication occurs.<> |
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