Affiliation: | a Forschungszentrum Rossendorf, Postfach 510119, D-01314, Dresden, Germany b Department of Physics, University of Thessaloniki, Thessaloniki, Greece |
Abstract: | In recent years, single-crystal SiC has become an important electronic material due to its excellent physical and chemical properties. The present paper reports a study of the defect reduction and recrysallisation during annealing of Ge+-implanted 6H-SiC. Implants have been performed at 200 keV with doses of 1 × 1014 and 1 × 1015 cm?2. Furnace annealing has been carried out at temperatures of 500, 950 and 1500°C. Three analytical techniques including Rutherford backscattering spectrometry in conjunction with channelling (RBS/C), positron annihilation spectroscopy (PAS) and cross-sectional transmission electron microscopy (XTEM) have been employed for sample characterisation. It has been shown that damage removal is more complicated than in ion-implanted Si. The recrystallisation of amorphised SiC layers has been found to be unsatisfactory for temperatures up to 1500°C. The use of ion-beam-induced epitaxial crystallisation (IBIEC) has been more successful as lattice regrowth, although still imperfect, has been observed to occur at a temperature as low as 500°C. |