A narrow-channel, 0.2-μm gate-length, double-quantum-wellpseudomorphic MODFET with high power gain at millimeter-wave frequencies |
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| Authors: | Metze G.M. Lee T.T. Bass J.F. Laux P.L. Carlson H.C. Cornfeld A.B. |
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| Affiliation: | Comsat Lab., Clarksburg, MD; |
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| Abstract: | State-of-the-art pseudomorphic MODFETs were developed with metallurgical gate lengths between 0.22 and 0.25 μm, very short source-to-drain spacings of 0.7 μm, and a double-quantum-well material structure. S-parameter measurements were performed on these 60-μm gate-width devices up to 40 GHz. From these S-parameter measurements, an extrapolated value of 82 GHz was estimated for Ft. Modeling of the power gain as a function of frequency indicates that Fmax may be as high as 305 GHz |
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