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Preparation of In2O3:F thin films grown by spray pyrolysis technique
Authors:S M Rozati  T Ganj
Affiliation:Physics Department, The University of Guilan, Rasht 41335, Iran
Abstract:Transparent conducting fluorine doped indium oxide (In2O3:F) thin films have been deposited on Corning 7059 glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. The X-ray diffraction pattern of the films deposited at lower substrate temperature (Ts=300 °C) showed no peaks of In2O3:F. In the useful range for deposition (i.e. 425–600 °C), the orientation of the films was predominantly 400]. For the 4500 Å thick In2O3:F deposited with an F content of 10-wt%, the minimum sheet resistance was 120 Ω and average transmission in the visible wavelength rang (400–700 nm) was 88%.
Keywords:In2O3:F  Spray pyrolysis  Transparent-conducting oxide
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