| 等离子体中频电源的驱动与保护电路设计 |
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| 引用本文： | 陈首部,孙奉娄,孙南海. 等离子体中频电源的驱动与保护电路设计[J]. 现代电子技术, 2007, 30(1): 78-80 |
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| 作者姓名： | 陈首部 孙奉娄 孙南海 |
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| 作者单位： | 中南民族大学,等离子体研究所,湖北,武汉,430074 |
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| 摘 要： | 讨论了150 kHz等离子体中频电源的驱动与保护电路设计方案。该电路采用脉冲变压器耦合MOSFET管驱动电路,具有输出变压器原边平均电流和副边峰值电流的过流保护功能。结果表明:驱动波形的上升和下降时间都不超过80 ns,并能在检测到过流信号时封锁驱动信号,关断变换器中的开关器件,切断过流故障,有效进行电路保护。
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| 关 键 词： | 等离子体电源 中频 驱动电路 保护电路 |
| 文章编号： | 1004-373X（2007）01-078-03 |
| 收稿时间： | 2006-06-09 |
| 修稿时间： | 2006-06-09 |
Design of Intermediate Frequency Plasma Power Supply Drive and Protection Circuit |
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| CHEN Shoubu,SUN Fenglou,SUN Nanhai. Design of Intermediate Frequency Plasma Power Supply Drive and Protection Circuit[J]. Modern Electronic Technique, 2007, 30(1): 78-80 |
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| Authors: | CHEN Shoubu SUN Fenglou SUN Nanhai |
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| Affiliation: | Plasma Research Institute,South Central University for Nationalities,Wuhan,430074,China |
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| Abstract: | This paper discusses the drive circuit and protection circuit design scheme of 150 kHz.The circuit,with over-current protection of output transformer original side average current and side peak current,adopts pulse transformer coupling MOSFET driving circuit.Results show: rising and falling time of driving waveforms are no more than 80 ns.In addition,blocking driving signals while detecting over-current signals,turning off swiching device in the convertor,cutting off over-current thus fault,protecting circuit efficiently. |
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| Keywords: | plasma power supply intermediate frequency drive circuit protection circuit |
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