Effect on Ordering of the Growth of GaInP Layers
on (111)-GaAs Faces |
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| Authors: | O Martínez V Hortelano J Jiménez V Parra C Pelosi G Attolini T Prutskij |
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| Affiliation: | (1) Department of Materials Science and Engineering, Purdue University, West Lafayette, IN 47907, USA;(2) Department of Materials Science and Engineering, Korea University, Seoul, 136-713, Korea;(3) Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT 84112, USA; |
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| Abstract: | GaInP, an essential material for multijunction structures of III–V compounds for solar cells, can achieve better photovoltaic
responses when grown on (111)GaAs faces, due to the large internal electric fields generated by the off-diagonal strain. In
this work, we explored metalorganic chemical vapor deposition growth of GaInP layers on (001)-, (111)Ga-, and (111)As-GaAs
substrates, using different phosphine flow rates. The structural and optical properties of the layers have been studied by
micro-Raman spectroscopy, microphotoluminescence, and cathodoluminescence. Problems such as composition control, growth rate,
and the presence of ordered phases are addressed. |
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