InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy |
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| Authors: | Kawamura Y. Asahi H. Wakita K. |
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| Affiliation: | NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan; |
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| Abstract: | InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 ?m has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers. |
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