| 本征纳米硅薄膜的微结构表征 |
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| 引用本文： | 刘绪伟,郜小勇,赵剑涛,杨仕娥,陈永生,谷锦华,卢景霄. 本征纳米硅薄膜的微结构表征[J]. 真空科学与技术学报, 2007, 27(3): 200-202 |
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| 作者姓名： | 刘绪伟 郜小勇 赵剑涛 杨仕娥 陈永生 谷锦华 卢景霄 |
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| 作者单位： | 郑州大学教育部材料物理重点实验室,郑州,450052 |
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| 摘 要： | 采用PECVD技术,在玻璃衬底上低温沉积了优质本征纳米硅薄膜,并利用Raman光谱对其微结构作了表征。研究结果表明,硅烷浓度、衬底温度Ts对表征纳米硅薄膜微结构的晶化率和平均晶粒尺寸参数影响很大。SiH4浓度越低,越有利于晶化,对应的晶化率拐点温度越低。平均晶粒尺寸、晶化率随衬底温度的升高具有相似的变化规律,谱中出现的拐点温度一致,暗示它们之间存在紧密的联系。从薄膜生长角度对该实验结果作了合理解释。
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| 关 键 词： | 纳米硅 晶化率 晶粒尺寸 拐点温度 |
| 文章编号： | 1672-7126（2007）03-200-03 |
| 修稿时间： | 2006-06-20 |
Microstructures of Intrinsic nc-Si: H Films |
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| Liu Xuwei,Gao Xiaoyong,Zhao Jiantao,Yang Shie,Chen Yongsheng,Gu Jinhua,Lu Jingxiao. Microstructures of Intrinsic nc-Si: H Films[J]. JOurnal of Vacuum Science and Technology, 2007, 27(3): 200-202 |
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| Authors: | Liu Xuwei Gao Xiaoyong Zhao Jiantao Yang Shie Chen Yongsheng Gu Jinhua Lu Jingxiao |
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| Affiliation: | The Key Lab of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou 450052, China |
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| Abstract: | High quality nc-Si:H films were grown by plasma enhanced chemical vapor deposition(PECVD) on glass substrates at low temperatures.Its microstructures were characterized with Raman spectroscopy.The results show that the SiH4 partial pressure and the substrate temperature significantly affect the crystallization and grain size of the film.For example,the lower the SiH4 partial pressure,the better the crystallization;as the substrate temperature rises,the grain grows and the crystallization improves.Possible mechanism(s) was also tentatively explained. |
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| Keywords: | nc-Si:H Crystalline volume fraction Grain size Inflection point temperature |
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