| 高迁移率的钛掺杂氧化铟薄膜在晶硅/非晶硅异质结电池上的应用研究 |
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| 引用本文： | 黄金,鲍少娟,鲁林峰,杨骥,白焱辉,张娟,高勇,王继磊. 高迁移率的钛掺杂氧化铟薄膜在晶硅/非晶硅异质结电池上的应用研究[J]. 稀有金属材料与工程, 2021, 50(3): 848-852 |
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| 作者姓名： | 黄金 鲍少娟 鲁林峰 杨骥 白焱辉 张娟 高勇 王继磊 |
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| 作者单位： | 晋能清洁能源科技股份公司,晋能清洁能源科技股份公司,中国科学院上海高等研究院,晋能清洁能源科技股份公司,晋能清洁能源科技股份公司,晋能清洁能源科技股份公司,从事从事异质结太阳能电池非晶硅镀膜的研究。,从事从事异质结太阳能电池非晶硅镀膜的研究。 |
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| 摘 要： | 采用钛掺杂氧化铟旋转靶制备透明导电薄膜应用在晶硅/非晶硅异质结电池上。在不同氧含量下,研究钛掺杂氧化铟薄膜(T100薄膜)的光电性能,同时对比分析ITO薄膜。在电镜下T100薄膜呈现出柱状结构,并且展示出优异的光学性能。T100薄膜最大载流子迁移率可以达到75.6 cm~2·(V·s)-1。相比于ITO薄膜,T100薄膜具有优异的电学传导和透光率,因此在异质结电池量产线上电池转换效率可以实现0.26%的提升。
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| 关 键 词： | 钛掺杂氧化铟 透明导电薄膜 异质结电池 |
| 收稿时间： | 2020-03-09 |
| 修稿时间： | 2020-06-05 |
High mobility Ti-doped In2O3 films for amorphous/crystalline silicon heterojunction solar cells |
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| Jin Huang,Shaojuan Bao,Linfeng Lu,Ji Yang,Yanhui Bai,Juan Zhang,Yong Gao and Jilei Wang. High mobility Ti-doped In2O3 films for amorphous/crystalline silicon heterojunction solar cells[J]. Rare Metal Materials and Engineering, 2021, 50(3): 848-852 |
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| Authors: | Jin Huang Shaojuan Bao Linfeng Lu Ji Yang Yanhui Bai Juan Zhang Yong Gao Jilei Wang |
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| Affiliation: | HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,Thin Film Optoelectronic Technology Center,Shanghai Advanced Research Institute,Chinese Academy of Sciences,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province,HJT Solar Cell Project R D,JINNENG Clean Energy Technology LTD,Shanxi Comprehensive Reform Model Area,Jinzhong Area,Shanxi Province |
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| Abstract: | A newly Ti-doped In2O3 rotary target was used to prepare transparent conductive oxide(TCO)films for amorphous/crystalline silicon heterojunction solar cells.The changes in electrical and optical properties of TCO films were investigated based on T100 thin films deposited with various O2 contents and compared with indium tin oxide(ITO).Results show that a columnar structure is observed and exhibits high quality of optical performance.Maximum mobility of 75.6 cm2·(V·s)-1 is observed in Ti-doped In2O3 films.Compared to the results of ITO films,it is verified that the cell conversion efficiency based on the heterojunction(HJT)production line improves by 0.26%of T100 material,mainly benefiting from the excellent electrical transport properties,as well as the high transparency. |
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| Keywords: | Ti-doped In2O3 transparent conductive oxide (TCO) film heterojunction solar cell |
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