Light Effect in Photoionization of Traps in GaN MESFETs

Trapping of hot electron behavior by trap centres located in buffer layer of a wurtzite phase GaN MESFET has been simulated using an ensemble Monte Carlo simulation.The simulated results show the trap centres are responsible for current collapse in GaN MESFET at low temperatures.These electrical traps degrade the performance of the device at low temperature.On the opposite,a light-induced increase in the trap-limited drain current results from the photoionization of trapped carriers and their return to the ...