| n－GaAsTi／Mo／Ti／Au中肖特基势垒接触稳定性的研究 |
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| 引用本文： | 李志国,赵瑞东,程尧海,吉元,郭伟玲,孙英华,李学信,张斌,吕振中.n－GaAsTi／Mo／Ti／Au中肖特基势垒接触稳定性的研究[J].北京工业大学学报,1996(2). |
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| 作者姓名： | 李志国 赵瑞东 程尧海 吉元 郭伟玲 孙英华 李学信 张斌 吕振中 |
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| 作者单位： | 北京工业大学电子工程学系，南京电子工业部５５所 |
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| 摘 要： | 对Ｔｉ／Ｍｏ／Ｔｉ／Ａｕ作为栅金属的ＧａＡｓＭＥＳＦＥＴ进行了高温反偏（ＨＴＲＢ）、高压反偏（ＨＲＢ）、高温正向大电流（ＨＦＧＣ）、高温存贮（ＨＴＳ）４种不同的应力试验。通过ＨＲＢ，φｂ从０．６４ｅＶ减少到０．６２ｅＶ，理想因子ｎ略有增大，ＨＴＳ试验中φｂ从０．６７ｅＶ增加到０．６９ｅＶ。分析表明，这归因于界面氧化层的消失，以及Ｔｉ与ＧａＡｓ的反应；ＨＦＧＣ试验结果表明，其主要的失效模式为烧毁，同时，ＳＥＭ观察中也有电徙动及断栅现象发生。ＡＥＳ分析表明，应力试验后的样品，其肖特基势垒接触界面出现模糊，有明显的互扩散和反应发生。
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| 关 键 词： | 砷化镓，肖特基势垒，接触退化 |
Stability of Schottky Contact in n-GaAs Ti/Mo/Ti/Au |
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| Li Zhiguo, Zhao Ruidong, Cheng Yaohai,Ji Yuan Guo Weiling,Sun Yinghua, Li Xuexin.Stability of Schottky Contact in n-GaAs Ti/Mo/Ti/Au[J].Journal of Beijing Polytechnic University,1996(2). |
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| Authors: | Li Zhiguo Zhao Ruidong Cheng Yaohai Ji Yuan Guo Weiling Sun Yinghua Li Xuexin |
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| Abstract: | In this paper,the Ti/Mo/Ti/Au Schottky barrier contact in GaAs MESFETs were investigated by means of: (1) high reverse biased test (HRB). (2) high temperature reverse biased (HTRB).(3) high temperature forword gate current (HFGC).(4) high temperature storage (HTS).The tests show that the barrier height decrease from 0.64ev to 0.62eV in HRB test,while in HTS, the increase from 0.67eV to 0.69eV, due to the disappearance of interface oxide layer and the interaction of Ti to GaAs.During HFGC test,the main failure mode is burnout,SEM analysis finds electromigration and ungate phenomena appearing simultaniously.AES indicates that interaction, between gate metallization and GaAs active layer, happens and the Schottky contact interface becomes ambiguous after stressing. |
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| Keywords: | GaAs schottky barrier contact degradation |
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