Ga0.47In0.53As JFETs and MESFETs with OM-VPE-grown GaAs surface layers |
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| Authors: | Selders J. Roentgen P. Beneking H. |
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| Affiliation: | Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany; |
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| Abstract: | Ga0.47In0.53As JFETs and MESFETs have been fabricated with a lattice-mismatched GaAs layer under the gate. The GaAs could be grown with good electrical and crystallo-graphic quality in spite of the large lattice mismatch by an OM-VPE process. Pn, Np and Schottky diodes were fabricated and applied to n-GaInAs FET channels. Both types of devices exhibited high transconductances of about 100 mS/mm. |
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