Wideband and high-power compressively strained GaInAsP/InPmultiple-quantum-well ridge waveguide lasers emitting at 1.3 μm |
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| Authors: | Fukushima T. Matsumoto N. Nakayama H. Ikegami Y. Namegaya T. Kasukawa A. Shibata M. |
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| Affiliation: | Furukawa Electr. Co. Ltd., Yokohama; |
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| Abstract: | Compressively strained 1.3-μm GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85°C |
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