| 不同退火升温速率下PZT铁电薄膜中的残余应力分析 |
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| 引用本文： | 王敬宇,左长明,姬洪. 不同退火升温速率下PZT铁电薄膜中的残余应力分析[J]. 材料导报, 2011, 25(4): 78-81 |
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| 作者姓名： | 王敬宇 左长明 姬洪 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 基金项目： | 中国科学自然基金委员会(50802012) |
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| 摘 要： | 室温下利用射频磁控溅射在Pt/Ti/SiO2/Si(100)上淀积了约200nm厚的PZT铁电薄膜,在N2(纯度为99.999%)气氛中以不同升温速率进行快速热退火,采用X射线衍射法表征其残余应力。结果表明,薄膜中的应力不是二维应力而是三维应力,且除了切应力σ22以外的大部分应力张量的分量为张应力;薄膜中张应力的增大主要是由于氧空位与晶粒尺寸共同作用的结果,而该应力的减小是由于晶粒尺寸在薄膜应力演变过程中占主导地位所致。
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| 关 键 词： | X射线衍射 应力 氧空位 晶粒尺寸 |
Analysis on the Residual Stress of the PZT Ferroelectric Thin Film at Various Annealing Heating Rates |
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| WANG Jingyu,ZUO Changming,JI Hong. Analysis on the Residual Stress of the PZT Ferroelectric Thin Film at Various Annealing Heating Rates[J]. Materials Review, 2011, 25(4): 78-81 |
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| Authors: | WANG Jingyu ZUO Changming JI Hong |
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| Affiliation: | WANG Jingyu,ZUO Changming,JI Hong(State Key Laboraory of Electronic Thin Films and Integrated Devices,University of Electronic Science andTechnology of China,Chengdu 610054) |
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| Abstract: | PZT ferroelectric thin films with thickness 200nm on Pt/Ti/SiO2/Si(100) substrate were prepared by RF magnetron sputtering at the room temperature.The films got fast thermal annealing at different heating rate in the N2(99.999%,purity) atmosphere,and X-ray diffraction method was used to characterize the residual stress of the PZT thin films.The results indicate that the stress in the film is not two-dimensional but three-dimensional,and the most components of the stress tensor are the tensile stress except ... |
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| Keywords: | X-ray diffraction stress oxygen vacancy grain size |
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