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Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence |
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| Authors: | Seung-Jun Yu Makoto Fujimaki Koichi Awazu Kimikazu Sasa |
| Affiliation: | a Department of Electrical Engineering and Bioscience, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan b National Institute of Advanced Industrial Science and Technology (AIST), Center for Applied Near-Field Optics Research (CAN-FOR), Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan c Tandem Accelerator Complex, Research Facility Center for Science and Technology, University of Tsukuba, Tennodai 1-1-1, Tsukuba, Ibaraki 305-8577, Japan |
| Abstract: | Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss. |
| Keywords: | 61.80.Jh 42.81.Gs 42.82.Et |
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