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Magnetic field sensor based on compensated silicon |
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| Authors: | M. K. Bakhadyrkhanov Kh. M. Iliev K. S. Ayupov O. É. Sattorov |
| Affiliation: | (1) Tashkent State Technical University, Tashkent, Uzbekistan |
| Abstract: | The phenomenon of negative magnetoresistance in compensated silicon doped with manganese has been studied. The possibility of using this effect in magnetic field sensors is assessed. |
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