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Effects of cetyltrimethylammonium bromide on redox deposition and rectification properties of silicon oxide thin film |
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| Authors: | Masaya Chigane Masanobu Izaki Ippei Yamaguchi Masami Ishikawa |
| Affiliation: | a Department of Electronic Materials, Osaka Municipal Technical Research Institute, 1-6-50, Morinomiya, Joto-ku, Osaka 536-8553, Japan b Department of Production Systems Engineering, Toyohashi University of Technology, 1-1, Hibarigaoka, Tempaku-cho, Toyohashi-shi, Aichi 441-8580, Japan c Graduate School of Engineering, Doshisha University, Kyotanabe, Kyoto 610-0321, Japan |
| Abstract: | Silicon oxide (SiOx) thin film was deposited onto fluorine-doped tin oxide (FTO) and silicon wafer substrate by the reduction of an aqueous solution containing ammonium hexafluorosilicate, dimethylamine borane and cetyltrimethylammonium bromide (CTAB). Characterization of the films by X-ray photoelectron spectroscopic depth profile and infrared spectroscopy proved that the addition of CTAB into the film enhanced the aggregation of silica particles and the growth rate. The SiOx films (resistivity: 3.2 × 108 Ω cm) remarkably improved the rectification properties of FTO/SiOx/poly(3,4-ethylenedioxythiophene) derivative diodes. A rectification mechanism based on conduction of electron and ions was investigated. |
| Keywords: | Silicon oxide Thin film Redox deposition Cetyltrimethylammonium bromide Rectification property |
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