|
|||||
|
|
Structural properties of Cu(In,Ga)Se2 thin films prepared from chemically processed precursor layers |
|
| Authors: | C.J. Hibberd M. Ganchev S.E. Dann H.U. Upadhyaya |
| Affiliation: | a Centre for Renewable Energy Systems Technology, Holywell Park GX Area, Department for Electronic and Electrical Engineering, Loughborough University, Leicestershire, LE11 3TU, UK b Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria c Thin Film Physics Group, Laboratory for Solid State Physics, ETH Zurich, Technopark, 8005 Zurich, Switzerland d Department of Chemistry, Loughborough University, Leicestershire, LE11 3TU, UK e Institute of Physical Electronics, Universitaet Stuttgart, Pfaffenwaldring 47, D-70569, Stuttgart, Germany |
| Abstract: | We have developed a chemical process for incorporating copper into indium gallium selenide layers with the goal of creating a precursor structure for the formation of copper indium gallium diselenide (CIGS) photovoltaic absorbers. Stylus profilometry, EDX, Raman spectroscopy, XRD and SIMS measurements show that when indium gallium selenide layers are immersed in a hot copper chloride solution, copper is incorporated as copper selenide with no increase in the thickness of the layers. Further measurements show that annealing this precursor structure in the presence of selenium results in the formation of CIGS and that the supply of selenium during the annealing process has a strong effect on the morphology and preferred orientation of these layers. When the supply of Se during annealing begins only once the substrate temperature reaches ≈ 400 °C, the resulting CIGS layers are smoother and have more pronounced preferred orientation than when Se is supplied throughout the entire annealing process. |
| Keywords: | Thin film solar cells CuInGaSe2 CIGS Non vacuum Ion exchange |
| 本文献已被 ScienceDirect 等数据库收录！ | |