Large area Ba1 − xSrxTiO3 thin films for microwave applications deposited by pulsed laser ablation |
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Authors: | CV Varanasi KD Leedy G Subramanyam |
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Affiliation: | a University of Dayton Research Institute, Dayton, OH, 45469 USA b Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Ohio, 45433 USA c Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio, 45433 USA d University of Dayton, Dayton, OH, 45469 USA |
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Abstract: | Large area Ba1 − xSrxTiO3 (BST) thin films with x = 0.4 or x = 0.5 were deposited on 75 mm diameter Si wafers in a pulsed laser deposition (PLD) chamber enabling full-wafer device fabrication using standard lithography. The deposition conditions were re-optimized for large PLD chambers to obtain uniform film thickness, grain size, crystal structure, orientation, and dielectric properties of BST films. X-ray diffraction and microstructural analyses on the BST films grown on Pt/Au/Ti electrodes deposited on SiO2/Si wafers revealed films with (110) preferred orientation with a grain size < 100 nm. An area map of the thickness and crystal orientation of a BST film deposited on SiO2/Si wafer also showed (110) preferred orientation with a film thickness variation < 6%. Large area BST films were found to have a high dielectric tunability of 76% at an electric field of 400 kV/cm and dielectric loss tangent below 0.03 at microwave frequencies up to 20 GHz and a commutation quality factor of ~ 4200. |
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Keywords: | Physical vapor deposition Ferroelectric properties Laser ablation Oxides |
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