Electrical and optical properties of Al-doped ZnO films deposited by hollow cathode gas flow sputtering |
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| Authors: | Hiroshi Takeda Yoshinori Iwabuchi Yuzo Shigesato |
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| Affiliation: | a Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-11 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan
b Chemical and Industrial Products Technology Division, Bridgestone Corporation, 3-1-1 Ogawahigashi, Kodaira, Tokyo 187-8531, Japan |
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| Abstract: | Al-doped ZnO (AZO) films were deposited on glass by hollow cathode gas flow sputtering using Zn-Al alloy targets. Sputtering power for all the depositions was fixed at 1500 W. Resistivities of 0.81-1.1 × 10− 3 Ω cm were obtained for AZO films deposited at room temperature with an O2 flow from 38 to 50 standard cubic centimetre/minute (SCCM), while static deposition rates were almost constant at 270-300 nm/min. On the other hand, lower resistivities of 5.2-6.4 × 10− 4 Ω cm were obtained for AZO films deposited at 200 °C with an O2 flow from 25 to 50 SCCM, while the static deposition rates were almost constant at 200-220 nm/min. Average transmittances in the visible light region were above 80% for both sets of films. |
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| Keywords: | ZnO Al-doped ZnO (AZO) Transparent conductive oxide (TCO) Hollow cathode discharge Gas flow sputtering (GFS) |
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