Comparative study of Cu(In,Ga)Se2/(PVD)In2S3 and Cu(In,Ga)Se2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements |
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| Authors: | A Darga D Mencaraglia A Migan Dubois J Serhan N Barreau |
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| Affiliation: | a Laboratoire de Génie Electrique de Paris, CNRS UMR8507, SUPELEC, UPMC Univ Paris 06, Univ Paris-Sud, 11 rue Joliot-Curie, Plateau de Moulon, F-91192 Gif-sur-Yvette Cedex, France
b Institut des Matériaux Jean Rouxel (IMN)-UMR 6502, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3, France |
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| Abstract: | Co-evaporated Cu(In,Ga)Se2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the PVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV. |
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| Keywords: | Cu(In Ga)Se2 In2S3 Buffer layers Traps levels Admittance spectroscopy |
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