Synthesis and characterization of Nb2AlC thin films |
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Authors: | TH Scabarozi J Roche SH Lim G Yong MW Barsoum SE Lofland |
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Affiliation: | a Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, USA b Department of Materials Science and Engineering, Drexel University, Philadelphia, PA 19104, USA c Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA d Department of Physics and Astronomy, Towson University,Towson, MD 21252, USA |
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Abstract: | We report on the synthesis and characterization of epitaxial c-axis oriented Nb2AlC thin films deposited on c-axis sapphire (Al2O3) substrates by magnetron sputtering. Selected area electron diffraction reveal that independent of substrate temperature or film stoichiometry, there is the growth of a secondary phase not found in bulk, Nb5Al3Cx with a- and c-axis lattice constants of 7.746 Å and 5.246 Å, respectively. Scanning electron micrographs reveal large surface features, many with hexagonal shape and faceted texture. Atomic force microscopy topographical measurements indicate a surface roughness of approximately 15% of the total film thickness. Electrical transport measurements show typical metal-like conduction with a room temperature resistivity of ≈ 0.9 μΩ-m and a residual resistivity ratio of 2.5. A superconducting transition was found at ≈ 440 mK. |
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Keywords: | Carbides Sputtering Superconductivity |
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