Influence of substrates on the structural and morphological properties of RF sputtered ITO thin films for photovoltaic application |
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| Authors: | Negin Manavizadeh Farhad Akbari Boroumand Farshid Raissi Alireza Khodayari |
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| Affiliation: | a Electrical Engineering Department, K. N. Toosi, University of Technology, Tehran, Iran
b Thin Film Laboratory, Electrical and Computer Engineering Department, University of Tehran, Tehran, Iran |
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| Abstract: | Polycrystalline ITO films were deposited by RF sputtering on three different substrates of glass, p-type (100) and multicrystalline textured silicon wafers. Properties of ITO films were analyzed by XRD, SEM, four point probe system and UV/VIS/IR spectrometer. The ITO film on mono and multi-Si crystallizes in a three-dimensional manner, and a granular crystalline structure is formed with a (222) XRD peak, while the ITO film on glass shows strong XRD (400) peak and grows in two dimensions and a domain structure is formed. Resistivity measurements reveal that resistivity of ITO on glass is minimum due to higher concentration of carriers. |
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| Keywords: | Mono and multicrystalline RF sputtering Structural and morphological properties ITO thin films Annealing in vacuum |
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