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Electrical and materials properties of AlN/ HfO2 high-k stack with a metal gate |
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| Authors: | Kimberly G Reid Sri Samavedam |
| Affiliation: | a Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737, United States b Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747, United States c Tokyo Electron U.S., United States d Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721, United States e SEMATECH 2706 Montopolis Drive, Austin, TX 78741, United States f Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, United States |
| Abstract: | In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO2 that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO2 using sequential exposures of trimethyl-aluminum and ammonia (NH3) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 Å for the AlN/HfO2 stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10− 5 to mid 10− 6 A/cm2 at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO2 with the MoN metal gate, even with a 1000 °C anneal. |
| Keywords: | Aluminum nitride Atomic layer deposition Gate dielectric High κ High permittivity Molecular layer deposition Molybdenum nitride Metal gate Capping layer Effective work function |
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