Characterization of 3C-SiC micro-pillars on Si(100) substrate grown by vapor-liquid-solid process |
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| Authors: | YF Chen XW Deng YR Li |
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| Affiliation: | State key laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 610054, Chengdu, China |
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| Abstract: | Cubic silicon carbide (3C-SiC) micro-pillars were fabricated on Si (100) substrate by vapor-liquid-solid (VLS) process. The microstructure and residual stress of the micro-pillars were investigated by electron microscopy and micro-Raman spectroscopy, respectively. The selected area diffraction pattern of the SiC micro-pillar indicated that the micro-pillar was 3C-SiC single crystal. The residual stress of about 0.3 GPa in the micro-pillar calculated from Raman spectrum indicated that the VLS grown 3C-SiC micro-pillars had good crystalline quality. |
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| Keywords: | 3C-SiC Vapor-liquid-solid process Micro-pillars Strain Infrared Raman spectrocopy Scanning electron miscoscopy Transmission electron microscopy |
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