A combined top-down and bottom-up approach to fabricate silica films with bimodal porosity |
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Authors: | Kazuya IjichiAyumu Fukuoka Atsushi ShimojimaMasakazu Sugiyama Tatsuya Okubo |
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Affiliation: | a Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japanb Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan |
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Abstract: | We report a method to fabricate silica films with bimodal porosity based on the surfactant-directed self-assembly process followed by post-treatment with reactive ion etching (RIE). By RIE of a surfactant-templated mesoporous silica film with a 3D hexagonal structure, vertically-etched pores with the size of several tens of nanometers and the depth of ca. 60 nm are generated, while the original caged mesopores (ca. 5 nm in size) are still retained in the unetched parts of the film. Pre-treatment of the mesoporous silica film by wet-etching to expose the pores on the surface, followed by sputter deposition of a Pt layer for partial masking, is crucial for the anisotropic etching of the film. Such a combined top-down and bottom up approach offers an opportunity to fabricate silica films with hierarchical pore architectures. |
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Keywords: | Mesoporous silica Bimodal porosity Reactive ion etching |
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