Influence of Ni doping on magnetic behavior of Mn doped ZnO |
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| Authors: | J. DasD.K. Mishra D.R. SahuB.K. Roul |
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| Affiliation: | a Department of Physics, Silicon Institute of Technology, Bhubaneswar-751024, Indiab Advanced Materials Technology Department, Institute of Minerals and Materials Technology (CSIR), Bhubaneswar-751 013, Indiac School of Physics and DST/NRF centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Wits 2050, Johannesburg, South Africad Institute of Materials Science, Planetarium Building, Acharya Vihar, Bhubaneswar-751013, India |
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| Abstract: | Enhancement in room temperature ferromagnetism has been observed in Mn doped ZnO, when co-doped with Ni. In the co-doped system, Ni-O-Ni and Ni-O-Mn carrier mediated exchange interaction dominates the Mn-O-Mn exchange interaction which causes a fair increase in the value of saturation magnetization at room temperature. It is believed that the simultaneous doping of Ni and Mn onto ZnO increases the carrier concentration in form of clusters of oxygen vacancies and hence favors the carrier mediated exchange interaction for the enhancement of magnetic moments in the system. |
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| Keywords: | Defects Magnetic materials Raman Semiconductors X-ray techniques |
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