Layer-structured ZnO nanowire arrays with dominant surface- and acceptor-related emissions |
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Authors: | Haiping He Qian YangJingrui Wang Zhizhen Ye |
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Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China |
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Abstract: | We report the growth of uncommon layer-structured ZnO nanowire arrays via metal-organic chemical vapor deposition (MOCVD). The morphology, microstructure, and photoluminescence (PL) of the nanowires are investigated. The nanowires grow along the [0001] direction, with periodic zig-zag edges formed by the {101?1}-type surfaces. The nanowires exhibit unique PL features. The PL spectra at low temperature are dominated by the surface exciton recombination at 3.366 eV and the controversial 3.32 eV emission. For the 3.32 eV emission, transformation from donor-acceptor pair recombination to free electron-to-acceptor transition is observed with increasing temperature. The stacking faults formed in the interface region between the layers are likely responsible for the strong emission around 3.32 eV. |
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Keywords: | Chemical vapor deposition Nanocrystalline materials Semiconductors Microstructure Luminescence |
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