首页 | 本学科首页   官方微博 | 高级检索  
     


Band offset in Zn0.965Cd0.035O/ZnO bilayer films
Authors:Pinaki Das GuptaSaikat Chattopadhyay  R.J. ChoudharyD.M. Phase  Pratima Sen
Affiliation:
  • a Laser Bhawan, School of Physics, Devi Ahilya University, Indore-452 017, India
  • b UGC-DAE Consortium for Scientific Research, Indore-452 017, India
  • Abstract:Zn0.965Cd0.035O/ZnO bilayer film has been developed using pulsed laser deposition (PLD) technique. The film is characterized by X-ray diffraction (XRD), energy dispersion analysis by X-ray (EDAX), UV-Vis and Valence band spectra (VBS). The XRD pattern confirms the single phase crystalline nature of the deposited film. The UV-Vis spectra establish a reduction of band gap (≈ 340 meV) in the ternary alloy film of Zn0.965Cd0.035O/ZnO. The VBS shows shift in the peak corresponding to nonbonding oxygen p states. We also obtained valence band offset of 191 meV in the film showing the rise of valence band. The calculated conduction band offset is found to be −51 meV which confirms the lowering of the conduction band in the ternary alloy film.
    Keywords:Thin films   Multilayer structure   Deposition   Semiconductors
    本文献已被 ScienceDirect 等数据库收录!
    设为首页 | 免责声明 | 关于勤云 | 加入收藏

    Copyright©北京勤云科技发展有限公司  京ICP备09084417号