Band offset in Zn0.965Cd0.035O/ZnO bilayer films |
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Authors: | Pinaki Das GuptaSaikat Chattopadhyay R.J. ChoudharyD.M. Phase Pratima Sen |
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Affiliation: | a Laser Bhawan, School of Physics, Devi Ahilya University, Indore-452 017, Indiab UGC-DAE Consortium for Scientific Research, Indore-452 017, India |
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Abstract: | Zn0.965Cd0.035O/ZnO bilayer film has been developed using pulsed laser deposition (PLD) technique. The film is characterized by X-ray diffraction (XRD), energy dispersion analysis by X-ray (EDAX), UV-Vis and Valence band spectra (VBS). The XRD pattern confirms the single phase crystalline nature of the deposited film. The UV-Vis spectra establish a reduction of band gap (≈ 340 meV) in the ternary alloy film of Zn0.965Cd0.035O/ZnO. The VBS shows shift in the peak corresponding to nonbonding oxygen p states. We also obtained valence band offset of 191 meV in the film showing the rise of valence band. The calculated conduction band offset is found to be −51 meV which confirms the lowering of the conduction band in the ternary alloy film. |
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Keywords: | Thin films Multilayer structure Deposition Semiconductors |
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